? 2011 ixys all rights reserved 1 - 6 20110715a mixa 101w1200eh ixys reserves the right to change limits, test conditions and dimensions. six-pack xpt igbt v ces = 1200 v i c25 = 155 a v ce(sat) = 1.8 v features: ? easy paralleling due to the positive temperature coeffcient of the on-state voltage ? rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - square rbsoa @ 3x i c - low emi ? thin wafer technology combined with the xpt design results in a competitive low v ce(sat) ? sonic? diode - fast and soft reverse recovery - low operating forward voltage application: ? ac motor drives ? solar inverter ? medical equipment ? uninterruptible power supply ? air-conditioning systems ? welding equipment ? switched-mode and resonant-mode power supplies package: ? "e3-pack" standard outline ? insulated copper base plate ? soldering pins for pcb mounting ? optimizes pin layout part name (marking on product) MIXA101W1200EH e72873 9 10 11 12 5 6 7 8 1 2 3 4 19 17 15 13, 21 14, 20 d1 d2 d3 d4 d5 d6 t1 t2 t3 t4 t5 t6
? 2011 ixys all rights reserved 2 - 6 20110715a mixa 101w1200eh ixys reserves the right to change limits, test conditions and dimensions. ouput inverter t1 - t6 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c 1200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 155 108 a a p tot total power dissipation t c = 25c 500 w v ce(sat) collector emitter saturation voltage i c = 100 a; v ge = 15 v t vj = 25c t vj = 125c 1.8 2.1 2.1 v v v ge(th) gate emitter threshold voltage i c = 4 ma; v ge = v ce t vj = 25c 5.4 6.0 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 0.03 0.6 0.3 ma ma i ges gate emitter leakage current v ge = 20 v 500 na q g(on) total gate charge v ce = 600 v; v ge = 15 v; i c = 100 a 295 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 125c v ce = 600 v; i c = 100 a v ge = 15 v; r g = 7 w 70 40 250 100 8.5 11 ns ns ns ns mj mj rbsoa reverse bias safe operating area v ge = 15 v; r g = 7 w; t vj = 125c v cek = 1200 v 300 a scsoa t sc i sc short circuit safe operating area short circuit duration short circuit current v ce = 900 v; v ge = 15 v; t vj = 125c r g = 7 w ; non-repetitive 400 10 s a r thjc thermal resistance junction to case (per igbt) 0.25 k/w output inverter d1 - d6 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitve reverse voltage t vj = 25c 1200 v i f25 i f80 forward current t c = 25c t c = 80c 135 90 a a v f forward voltage i f = 100 a; v ge = 0 v t vj = 25c t vj = 125c 1.95 1.95 2.2 v v q rr i rm t rr e rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v di f /dt = -1600 a/s t vj = 125c i f = 100 a; v ge = 0 v 12.5 100 350 4 c a ns mj r thjc thermal resistance junction to case (per diode) 0.4 k/w t c = 25c unless otherwise stated
? 2011 ixys all rights reserved 3 - 6 20110715a mixa 101w1200eh ixys reserves the right to change limits, test conditions and dimensions. module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 125 150 125 c c c v isol isolation voltage i isol < 1 ma; 50/60 hz 3000 v~ cti comparative tracking index 200 m d mounting torque (m5) 3 6 nm d s d a creep distance on surface strike distance through air 10 7.5 mm mm r pin-chip resistance pin to chip 2.5 mw r thch thermal resistance case to heatsink with heatsink compound 0.02 k/w weight 300 g equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 igbt t1 - t6 t vj = 150c 1.1 13.8 v mw v 0 r 0 free wheeling diode d1 - d6 t vj = 150c 1.25 8.5 v mw i v 0 r 0 t c = 25c unless otherwise stated
? 2011 ixys all rights reserved 4 - 6 20110715a mixa 101w1200eh ixys reserves the right to change limits, test conditions and dimensions. part number m = module i = igbt x = xpt a = standard 101 = current rating [a] w = six-pack 1200 = reverse voltage [v] eh = e3-pack ordering part name marking on product delivering mode base qty ordering code standard MIXA101W1200EH MIXA101W1200EH box 5 511591 circuit diagram outline drawing dimensions in mm (1 mm = 0.0394) product marking x x x x x - x x x x x y y c wx p a r t n a m e d a t e c o d e l o g o prod.index 2d d a t a matrix foss-id 6 digits 9 10 11 12 5 6 7 8 1 2 3 4 19 17 15 13, 21 14, 20 d1 d2 d3 d4 d5 d6 t1 t2 t3 t4 t5 t6
? 2011 ixys all rights reserved 5 - 6 20110715a mixa 101w1200eh ixys reserves the right to change limits, test conditions and dimensions. transistor t1 - t6 0 1 2 3 0 50 100 150 200 0 40 80 120 160 200 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 0 50 100 150 200 v ce [v] i c [a] q g [nc] v ge [v] 9 v 11 v 5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 0 5 10 15 20 t vj = 125c 13 v 0 4 8 12 16 20 24 6 8 10 12 14 16 e [mj] e off fig. 1 typ. output characteristics v ce [v] i c [a] v ge = 15 v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy vs. collector current e on fig. 6 typ. switching energy vs. gate resistance r g [ ] e [mj] i c [a] e on e off v ge = 15 v t vj = 25c t vj = 125c t vj = 25c t vj = 125c i c = 100 a v ce = 600 v r g = 6.8 v ce = 600 v v ge = 15 v t vj = 125c i c = 100 a v ce = 600 v v ge = 15 v t vj = 125c
? 2011 ixys all rights reserved 6 - 6 20110715a mixa 101w1200eh ixys reserves the right to change limits, test conditions and dimensions. inverter d1 - d6 1000 1200 1400 1600 1800 2000 2200 4 8 12 16 20 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj = 125c t vj = 25c t vj = 125c v r = 600 v 50 a 100 a 200 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 1000 1200 1400 1600 1800 2000 2200 40 60 80 100 120 140 160 i rm [a] di f /dt [a/s] t vj = 125c v r = 600 v 200 a 50 a 100 a fig. 9 typ. peak reverse current i rm vs. di/dt 1000 1200 1400 1600 1800 2000 2200 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 200 a 50 a 100 a t vj = 125c v r = 600 v fig. 10 typ. recovery time t rr versus di/dt fig. 11 typ. recovery energy e rec versus di/dt 1000 1200 1400 1600 1800 2000 2200 0 2 4 6 8 e rec [mj] di f /dt [a/s] t vj = 125c v r = 600 v 200 a 50 a 100 a 0.001 0.01 0.1 1 10 0.01 0.1 1 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance igbt diode igbt frd r i t i r i t i 1 0.05 0.002 0.092 0.002 2 0.035 0.03 0.067 0.03 3 0.12 0.03 0.155 0.03 4 0.045 0.08 0.086 0.08
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